型号:

EM6M1T2R

RoHS:无铅 / 符合
制造商:Rohm Semiconductor描述:MOSFET N/P-CH 30V .1A EMT6
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
EM6M1T2R PDF
产品培训模块 MOSFETs
产品目录绘图 EM6 Series EMT-6
特色产品 ECOMOS? Series MOSFETs
标准包装 1
系列 -
FET 型 N 和 P 沟道
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V,20V
电流 - 连续漏极(Id) @ 25° C 100mA,200mA
开态Rds(最大)@ Id, Vgs @ 25° C 8 欧姆 @ 10mA,4V
Id 时的 Vgs(th)(最大) -
闸电荷(Qg) @ Vgs 0.9nC @ 4.5V
输入电容 (Ciss) @ Vds 13pF @ 5V
功率 - 最大 150mW
安装类型 表面贴装
封装/外壳 SOT-563,SOT-666
供应商设备封装 EMT6
包装 剪切带 (CT)
产品目录页面 1639 (CN2011-ZH PDF)
工具箱 846-1002-KIT-ND - KIT MOSFET 5EA OF 14 VALUES
其它名称 EM6M1T2RCT
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